Method of manufacturing photoelectric conversion device

Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Responsive to electromagnetic radiation

Reexamination Certificate

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Details

C438S069000, C438S072000, C257SE31097

Reexamination Certificate

active

07993953

ABSTRACT:
A method of manufacturing a photoelectric conversion device, comprises forming a first insulating film on a semiconductor substrate, forming a gate electrode by forming an electrically conductive layer on the first insulating film and patterning the electrically conductive layer, etching an exposed surface of the first insulating film, forming a charge accumulation region of a photoelectric converter by implanting impurity ions of a first conductivity type into the semiconductor substrate through a thinned portion of the first insulating film formed by the etching, removing the thinned portion, forming a second insulating film covering the semiconductor substrate and the gate electrode, and forming a surface region of the photoelectric converter by implanting impurity ions of a second conductivity type opposite to the first conductivity type into the semiconductor substrate through the second insulating film.

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patent: 2007/0092986 (2007-04-01), Chen et al.
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patent: 3-181171 (1991-08-01), None
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patent: 2007-67325 (2007-03-01), None

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