Method of manufacturing photodiode

Details Method of manufacturing photodiode Method of manufacturing photodiode

2004-07-30

2009-08-18

Monbleau, Davienne (Department: 2893)

Semiconductor device manufacturing: process

Manufacture of electrical device controlled printhead

C257S233000, C257SE31058, C257SE31115, C257SE25032

Reexamination Certificate

active

07575941

ABSTRACT:
A method of manufacturing of a photodiode is provided. The photodiode is formed on a substrate of a first conductive type. First, an isolation structure is formed in the substrate to define a photosensitive area in the substrate. Thereafter, trenches are formed in the substrate. Next, a doped layer of a second conductive type is formed on the substrate. The doped layer covers at least the inner wall of the trenches and a top portion of the substrate. The method of fabricating the photodiode can reduce overall processing time and cost and improve production efficiency.

REFERENCES:
patent: 4866500 (1989-09-01), Nishizawa et al.
patent: 5180690 (1993-01-01), Czubatyj et al.
patent: 6228750 (2001-05-01), Shibib
patent: 6566722 (2003-05-01), Lin et al.
patent: 6569700 (2003-05-01), Yang
patent: 6611037 (2003-08-01), Rhodes
patent: 6639261 (2003-10-01), Rhodes
patent: 6856001 (2005-02-01), Rhodes
patent: 6969899 (2005-11-01), Yaung et al.

Affiliated with

Also associated with

Rating

Method of manufacturing photodiode does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of manufacturing photodiode, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing photodiode will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4069230