Semiconductor device manufacturing: process – Manufacture of electrical device controlled printhead
Reexamination Certificate
2004-07-30
2009-08-18
Monbleau, Davienne (Department: 2893)
Semiconductor device manufacturing: process
Manufacture of electrical device controlled printhead
C257S233000, C257SE31058, C257SE31115, C257SE25032
Reexamination Certificate
active
07575941
ABSTRACT:
A method of manufacturing of a photodiode is provided. The photodiode is formed on a substrate of a first conductive type. First, an isolation structure is formed in the substrate to define a photosensitive area in the substrate. Thereafter, trenches are formed in the substrate. Next, a doped layer of a second conductive type is formed on the substrate. The doped layer covers at least the inner wall of the trenches and a top portion of the substrate. The method of fabricating the photodiode can reduce overall processing time and cost and improve production efficiency.
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Chang Ko-Hsing
Chang Su-Yuan
Harrison Monica D
Jianq Chyun IP Office
Monbleau Davienne
Powerchip Semiconductor Corp.
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