Method of manufacturing photo-diodes utilizing sequential diffus

Details Method of manufacturing photo-diodes utilizing sequential diffus Method of manufacturing photo-diodes utilizing sequential diffus

1976-02-25

1977-09-06

Rutledge, L. Dewayne

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

29572, 29580, 148 331, 148 335, 148186, 148187, 357 30, 357 89, 357 90, H01L 21223, H01L 3110

Patent

active

040466094

ABSTRACT:
A method of manufacturing a diode comprising a semiconductor body including at least first and second adjoining regions of the same conductivity type. The first region includes the diode junction and has a high resistivity, while the second region has a high impurity concentration that varies gradually and increases with increasing distance from the interface between the first and the second regions. The second region comprises two adjoining zones, the zone removed from the first region being more highly doped than the zone proximate said region. The second region is obtained by performing two successive diffusions of the same conductivity type as the first region to produce the two zones in said second region.

REFERENCES:
patent: 3226614 (1965-12-01), Haenichen
patent: 3277351 (1966-10-01), Osafune et al.
patent: 3362858 (1968-01-01), Knopp
patent: 3383571 (1968-05-01), Turner et al.
patent: 3534231 (1970-10-01), Biard
patent: 3556878 (1971-01-01), Ginsbach et al.
patent: 3582830 (1971-06-01), Pultorak et al.
patent: 3764415 (1973-10-01), Raabe et al.

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