Method of manufacturing phase shift masks and a method of manufa

Radiation imagery chemistry: process – composition – or product th – Radiation modifying product or process of making – Radiation mask

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430311, G03F 900

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active

057259712

ABSTRACT:
A technique to minimize an increase in the design and manufacture times required for making phase shift masks is provided. The process of the technique involves preparing a hole unit cell comprising one target hole and auxiliary holes located close to the four sides of the target hole, and then laying out on first layout data first hole unit cells 26c.sub.1 -26c.sub.3 arranged in a certain orientation at a first pitch and second hole unit cells 27c.sub.1 -27c.sub.3 arranged in the same orientation at a second pitch, narrower than the first pitch. This process generates data of hole groups, each comprising the target hole and auxiliary holes on a first phase shift mask that is used in forming hole patterns in a resist film coated over the semiconductor substrate.

REFERENCES:
patent: 5411823 (1995-05-01), Okamoto et al.
patent: 5436095 (1995-07-01), Mizuno et al.
patent: 5441834 (1995-08-01), Takekuma et al.
patent: 5565285 (1996-10-01), Takekuma et al.
"I-Line Lithography and Phase Shifting Technique," Proceedings of SEMI, Technology Symposium (Mar. 1992) pp. 17-21.

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