Method of manufacturing p-type nitride semiconductor and...

Details Method of manufacturing p-type nitride semiconductor and... Method of manufacturing p-type nitride semiconductor and...

2006-03-02

2011-12-13

Tran, Long (Department: 2829)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

C438S046000, C438S047000, C257SE33023, C257SE33025, C257SE33028, C257SE23033

Reexamination Certificate

active

08076165

ABSTRACT:
The present invention includes a first step of forming a nitride semiconductor layer by metal organic chemical vapor deposition by using a first carrier gas containing a nitrogen carrier gas and a hydrogen carrier gas of a flow quantity larger than that of the nitrogen carrier gas to thereby supply a raw material containing Mg and a Group V raw material containing N, and a second step of lowering a temperature by using a second carrier gas to which a material containing N is added, and hence solves the problems.

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