Fishing – trapping – and vermin destroying
Patent
1994-01-12
1995-11-21
Breneman, R. Bruce
Fishing, trapping, and vermin destroying
437105, 437174, 437247, 148DIG64, H01L 21203
Patent
active
054686784
ABSTRACT:
A method for manufacturing a III-V Group compound or a II-VI Group compound semiconductor element by VPE, comprising the step of annealing a grown compound at 400.degree. C. or higher, or irradiating electron beam the grown compound at 600.degree. C. or higher.
REFERENCES:
patent: 4904618 (1990-02-01), Neumark
patent: 4960728 (1990-10-01), Schaake et al.
patent: 5028561 (1991-07-01), Kamath et al.
patent: 5227328 (1993-07-01), Khan et al.
patent: 5262349 (1993-11-01), Yoshida
patent: 5273931 (1993-12-01), Tasker et al.
Yodo et al. in "Na.sup.+ ion implantatated epitaxial layers grown by . . . " in Appl. Phys. Letters 54(18), May 1989, pp. 1778-1780.
Yoshikawa et al. "Use of Dimethyl hydrazine as a . . . " in J. Crystal Growth 101, (1990), 305-310.
Kitamura in "Influences of heat treatment . . . " Jr. Phys. Soc. Japan 16(12), 1961, 2430-2439.
Iwasa Naruhito
Nakamura Shuji
Senoh Masayuki
Breneman R. Bruce
Nichia Chemical Industries Ltd.
Paladugu Ramamohan Rao
LandOfFree
Method of manufacturing P-type compound semiconductor does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of manufacturing P-type compound semiconductor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing P-type compound semiconductor will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1136723