Method of manufacturing oxide superconducting films by peritecti

Superconductor technology: apparatus – material – process – High temperature – per se – Having tc greater than or equal to 150 k

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505733, 505730, 427 62, 427169, 4274432, 4274301, B05D 512, B05D 118

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049944371

ABSTRACT:
A method of manufacturing an oxide superconductor by heating a raw material for an oxide superconductor composed of MBa.sub.2 Cu.sub.3 O.sub.7-.delta., where M represents at least a single element selected from a group of Y, Nd, Sm, Eu, Gd, Dy, Ho, Er, Tm, Yb and Lu, to a temperature higher than a peritectic reaction temperature for melting the same and thereafter reducing the temperature to the peritectic reaction temperature to crystallize the oxide superconductor by peritectic reaction. A method of forming a dispersion solution of powder of a raw material for an oxide superconductor and applying the same on a substrate to prepare a thick film. A method of dipping a single crystal of M.sub.2 BaCuO.sub.5 in a molten solution of a mixture of BaCuO.sub.2 and CuO to form a thin film of an oxide superconductor on the single crystal. A method of manufacturing a bulky oxide superconductor by dipping a porous sintered material of M.sub.2 BaCuO.sub.5 in a molten solution of a mixture of BaCuO.sub.2 and CuO.

REFERENCES:
patent: 4115604 (1978-09-01), Beinstein
Oka et al., "Phase Diagram of the La.sub.2 O.sub.3 --CuO System and Crystal Growth of (LaBa).sub.2 CuO.sub.4 ", Jpn. J. Appl. Phys., vol. 26(10) Oct. 1987, L1590-L1592.
Hermann et al., "Melt-Processible Rare Earth--Ba--Cu--O Superconductors Based on Molten Ba--Cu Oxides", Appl. Phys. lett., 51 (22) Nov. 1987, pp. 1854-1856.
Jin et al., "High Critical Current in Y--Ba--Cu--O", Superconductors, Appl. Phys. Lett. 52 (24) Jun. 1988, pp. 2074-2076.
Takada et al., "Ba.sub.2 YCu.sub.3 O.sub.x Crystal Formed by Peritectic Reaction", Jpn. J. Appl. Phys. 26(10) Oct. 1987, L1707-L1710.
Jin et al., "Fabrication of Dense Ba.sub.2 YCu.sub.3 O.sub.7-.delta. Superconductor Wire by Molten Oxide Processing", Appl. Phys. Lett. 51 (12) Sep. 1987, p. 943.
Japanese Journal of Applied Physics, vol. 26, pp. L812-L814, May, 1987, S. Ohshima et al.

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