Superconductor technology: apparatus – material – process – High temperature – per se – Having tc greater than or equal to 150 k
Patent
1992-03-03
1993-05-25
Lusigan, Michael
Superconductor technology: apparatus, material, process
High temperature , per se
Having tc greater than or equal to 150 k
505730, 505742, 505736, 427 62, 4271263, 427404, 427405, B05D 512
Patent
active
052140253
ABSTRACT:
Monatomic layers each formed of a single metal are sequentially formed on a substrate using a molecular-beam epitaxy to form a multilayered metal film consisting of a plurality of types of metals, and sequentially with formation the monatomic layers, nitrogen dioxide gas as an oxidizer is supplied to oxidize the multilayered metal film. The same operation is repeatedly performed a predetermined number of times to form an oxide high-temperature superconductor thin film having a predetermined thickness.
REFERENCES:
patent: 4771015 (1988-09-01), Kanai et al.
Tsaur et al., "Preparation of superconducting YBa.sub.2 Cu.sub.3 O.sub.x thin films by oxygen annealing of multilayer metal films", Appl. Phys. Lett. 54(11) Sep. 1987 pp. 858-860.
Kuroda et al, "Preparation of new high-T.sub.c superconducting Oxide Bi-Sr-Ca-Cu-O thin film by electron beam deposition technique" Jpn. J. Appl. Phys. 27(4) Apr. 1988 L625-L627.
Nonaka et al, "Preparation of NdBa.sub.2 Cu.sub.3 O.sub.7-.delta. films in ultrahigh vacuum with a NO.sub.2 supersonic molecular beam", Appl. Phys. Lett. 57(26) Dec. 1990 pp. 2850-2852.
Schuhl et al, "Atomic layer by atomic layer growth of DyBaCuO superconducting thin films by molecular beam epitaxy", Appl. Phys. Lett. 57(8) Aug. 1990 pp. 819-821.
Ohkubo, "Three phases in BiSrCaCuO thin films synthesized by the Multilayer deposition method", Jpn. J. Appl. Phys. 27(7) Jul. 1988 L1271-L1274.
Nakayama et al, "In Situ growth of Bi-Sr-Ca-Cu-O thin films by molecular beam epitaxy technique with pure ozone", Jpn. J. Appl. Phys. 28(7) Jul. 1989 L1217-L1219.
Japanese Journal of Applied Physics, vol. 29, No. 7, Jul. 1990, pp. L1111-L1113, S. Watanabe, et al., "Molecular Beam Epitaxy Study of Bi.sub.2 Sr.sub.2 CuO.sub.x Using NO.sub.2 as an Oxidizing Agent".
J. Vac. Sci. Technol., A 8, (6), Nov./Dec. 1990, pp. 4104-4105, M. Kawai, et al., "Ultrathin Film of Bi.sub.2 Sr.sub.2 CuO.sub.x Formed by Molecular Beam Epitaxy Using NO.sub.2 ".
Patent Abstracts of Japan, vol. 13, No. 254 (E-772)(3602), Jun. 13, 1989; & JP-A-151682 (Sumito Electric) Feb. 27, 1989.
Kawai Maki
Watanabe Shunji
King Roy V.
Lusigan Michael
President of Tokyo Institute of Technology
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