Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state
Patent
1994-09-30
1996-08-20
Kunemund, Robert
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
117925, 117927, C30B 2954
Patent
active
055468896
ABSTRACT:
A method of manufacturing an organic electronic device having a substrate and a pair of electrodes facing each other, including the steps of forming a polytetrafluoroethylene oriented film on a substrate, and contacting an oligothiophene compound with the polytetrafluoroethylene oriented film to form an organic oriented film on the polytetrafluoroethylene oriented film between the pair of electrodes wherein the long axis of oligothiophene molecules is oriented to the orientation of the polytetrafluoroethylene oriented film and crystallized.
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patent: 5142343 (1992-08-01), Hosokawa et al.
patent: 5180470 (1993-11-01), Smith et al.
patent: 5284779 (1994-02-01), Miyanaga
Hotta Shu
Sonoda Nobuo
Wakita Katsuya
Yang Yang
Kunemund Robert
Matsushita Electric - Industrial Co., Ltd.
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