Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Having diverse electrical device
Reexamination Certificate
2011-07-12
2011-07-12
Lee, Hsien-ming (Department: 2823)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Having diverse electrical device
C438S025000, C438S029000, C438S072000, C438S099000, C438S531000, C257SE33076, C257SE31127
Reexamination Certificate
active
07977126
ABSTRACT:
A method for manufacturing an organic light emitting device including a photo diode and a transistor includes forming a first semiconductor layer and a second semiconductor layer on separate portions of a buffer layer formed on the substrate; forming a gate metal layer on the first semiconductor layer, the gate metal layer covering a central region of the first semiconductor layer; forming a high-concentration P doping region and a high-concentration N doping region in the first semiconductor layer by injecting impurities into regions of the first semiconductor layer not covered by the gate metal layer to form the photodiode; forming a source and drain region and a channel region in the second semiconductor layer; and removing the gate metal layer from the central region of the first semiconductor layer by etching and simultaneously forming a gate electrode by etching, the gate electrode being insulated from the channel region of the second semiconductor layer, to form the transistor.
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Notice of Allowance issued in corresponding Korean Patent Application No. 10-2007-0066881 dated May 30, 2008.
Choi Byoung-Deog
Im Ki-Ju
Lee Yun-gyu
Park Hye-hyang
H.C. Park & Associates PLC
Lee Hsien-Ming
Parendo Kevin
Samsung Mobile Display Co., Ltd.
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