Semiconductor device manufacturing: process – Having organic semiconductive component
Reexamination Certificate
2011-08-23
2011-08-23
Smith, Matthew (Department: 2823)
Semiconductor device manufacturing: process
Having organic semiconductive component
C257S040000, C257SE51003, C257SE51027
Reexamination Certificate
active
08003435
ABSTRACT:
A method of fabricating an organic thin film transistor exhibiting excellent semiconductor performance by which an organic TFT can be formed continuously on a flexible base such as a polymer support through a simple coating process, and thus the fabrication cost can be reduced sharply, and an organic semiconductor layer thus formed has a high carrier mobility, In the method of fabricating an organic thin film transistor by forming a gate electrode, a gate insulation layer, an organic semiconductor layer, a source electrode and a drain electrode sequentially on a support, the organic semiconductor layer contains an organic semiconductor material having an exothermic point and an endothermic point in a differential scanning thermal analysis, and the organic semiconductor layer thus formed is heat-treated at a temperature not less than the exothermic point and less than the endothermic point.
REFERENCES:
patent: 6583583 (2003-06-01), Soeda et al.
patent: 2004/0056255 (2004-03-01), Robeson et al.
patent: 2006/0033086 (2006-02-01), Gerlach
patent: 2006/0076554 (2006-04-01), Maeda et al.
patent: 2006/0145148 (2006-07-01), Hirai et al.
patent: 2007/0078267 (2007-04-01), Dotz et al.
patent: 179249 (2004-06-01), None
patent: 234931 (2004-08-01), None
ChemicalBook, 2007, alpha-quarterthiophene at http://www.chemicalbook.com/ChemicalProductProperty—EN—CB3463576.htm.
Colle et al., “Thermal, structural and photophysical properties of the organic semiconductor Alq3”, Phys. Stat. Sol., 2004: pp. 1095-1115.
Hirai Katsura
Katakura Rie
Matsuda Atsuko
Obuchi Reiko
Takemura Chiyoko
Fan Michele
Konica Minolta Holdings Inc.
Lucas & Mercanti LLP
Smith Matthew
LandOfFree
Method of manufacturing organic film transistor does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of manufacturing organic film transistor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing organic film transistor will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2670814