Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Reexamination Certificate
2006-10-03
2006-10-03
Lee, Hsien-Ming (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
C257S072000, C438S149000, C438S152000, C438S164000, C438S099000
Reexamination Certificate
active
07115904
ABSTRACT:
To provide an organic electroluminescent device, a manufacturing method thereof, and an electronic apparatus, which can reduce wiring line resistance, lower power consumption, suppress heating and uniformize brightness. There is provided a method of manufacturing an organic electroluminescent device comprising, on a first electrode, a light-emitting functional layer surrounded by a first partition and a second partition. The method comprises a step of sequentially film-forming a first electrode material and a first partition material on an interlayer insulating film, a step of patterning the first electrode material and the first partition material with a mask to form the first electrode and the first partition in the same shape, and a step of forming the second partition on the interlayer insulating film and the first partition material.
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patent: 2004/0056588 (2004-03-01), Nozawa
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Ishida Yukimasa
Nozawa Ryoichi
Lee Hsien-Ming
Oliff & Berridg,e PLC
Seiko Epson Corporation
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