Method of manufacturing opto-electronic devices

Details Method of manufacturing opto-electronic devices Method of manufacturing opto-electronic devices

1975-12-08

1978-06-13

Powell, William A.

Chemistry: electrical and wave energy

Processes and products

Electrostatic field or electrical discharge

156628, 156648, 156655, 350 9634, H01L 21306

Patent

active

040947521

ABSTRACT:
A method of manufacturing opto-electronic semiconductor devices.
The method is characterized in that the material is AsAl.sub.x Ga.sub.1-x in which the molar proportion x is lower than 0.3, in that the material is stratified in different layers, and in that a chemical etching treatment is carried out in a bath containing hydrofluoric acid, nitric acid and acetic acid.

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patent: 3302051 (1967-01-01), Galginaitis
patent: 3679501 (1972-07-01), Chicotka
patent: 3756877 (1973-09-01), Muroaka et al.
patent: 3801391 (1974-04-01), Dyment et al.
patent: 3833435 (1974-09-01), Logan et al.
patent: 3892606 (1975-07-01), Chappelow et al.
patent: 3894895 (1975-07-01), Khandelwal
patent: 3913215 (1975-10-01), Heckl
patent: 3929531 (1975-12-01), Hattori et al.
patent: 3959098 (1976-05-01), Schwartz

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