Method of manufacturing optically sensitive semiconductor device

Details Method of manufacturing optically sensitive semiconductor device Method of manufacturing optically sensitive semiconductor device

1985-05-14

1986-08-19

Hearn, Brian E.

Metal working

Method of mechanical manufacture

Assembling or joining

29577C, 357 30, H01L 2714, H01L 2778

Patent

active

046061150

ABSTRACT:
A method of manufacturing optically sensitive semiconductor devices in which an anti-reflective coating is provided without the addition of mask or etch steps to the manufacturing process flow. A single layer of silicon nitride is patterned to provide an anti-reflective coating over the active area of the optically sensitive device and to form the dielectric of any capacitors also a part of the integrated circuit. An oxide passivation layer is used so that it may be opened over the active area without disturbing the anti-reflective coating.

REFERENCES:
patent: 4155094 (1979-05-01), Ohba

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