Method of manufacturing optical semiconductor element

Details Method of manufacturing optical semiconductor element Method of manufacturing optical semiconductor element

1992-07-28

1994-12-20

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437129, 437133, 148DIG26, H01L 2120

Patent

active

053745876

ABSTRACT:
In a method of manufacturing an optical semiconductor element including at least the steps of forming a mask having a stripe-like gap or interval on a semiconductor substrate, epitaxially growing a semiconductor ridge including an active layer on only an exposed gap portion of the semiconductor substrate, and epitaxially growing a semiconductor cladding layer to cover the ridge, the thickness of the active layer is substantially the same as the width of the active layer.

REFERENCES:
patent: 4077817 (1978-03-01), Bellavance
patent: 4946802 (1990-08-01), Shima et al.
patent: 4950622 (1990-08-01), Kwon et al.
patent: 5026662 (1991-06-01), Westbrook
patent: 5028562 (1991-07-01), Shima
patent: 5045500 (1991-09-01), Mitsui et al.
patent: 5070510 (1991-12-01), Konushi et al.
patent: 5179566 (1993-01-01), Iwana et al.
patent: 5250462 (1993-10-01), Sasaki et al.
patent: 5258326 (1993-11-01), Morishima et al.
K. Magari et al. "Polarization Insensitive Traveling wave Type Amplifier Using Strained Multiple Quantum Well Structure", IEEE Photonics Technology Letters vol. 2 (1990) pp. 556-558.
M. S. Lin et al. "Temperature Dependence of Polarization Characteristics in Buried Facet Semiconductor Laser Amplifiers", IEEE Journal of quantum Electronics vol. 26 (1990) pp. 1,772-1,778.
I. Cha et al. "1.5 .mu.m Band Travelling-Wave Semiconductor Optical Amplifiers with Window Facet Structure", Electronic Letters vol. 25 (1989) No. 18 pp. 1,241-1,242.
S. Cole et al. "Polarisation-Insensitive, Near-Travelling-Wave Semiconductor Laser Amplifiers at 1.5 .mu.m", Electronics Letters vol. 25 (1989) pp. 314-315.
N. A. Olsson et al. "Polarisation-Independent Optical Amplifier with Buried Facets", Electronics Letters vol. 25 (1989) pp. 1,048-1,049.
T. Kato et al. "DFB-LD/Modulator Integrated Light Source by Bandgap Energy Controlled Selective Movpe", Electronics Letters vol. 28 (1992) pp. 153-154.
Y. D. Galeuchet et al. "Selective area MOVPE of GaInAs/InP heterostructures on masked and nonplanar (100) and (111) substrates", Journal of Crystal Growth vol. 107 (1991) p. 147.

Affiliated with

Also associated with

Rating

Method of manufacturing optical semiconductor element does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of manufacturing optical semiconductor element, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing optical semiconductor element will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2386081