Method of manufacturing NPN device

Semiconductor device manufacturing: process – Forming bipolar transistor by formation or alteration of... – Forming lateral transistor structure

Reexamination Certificate

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C438S357000, C257SE21373

Reexamination Certificate

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07572707

ABSTRACT:
A method of forming a semiconductor device is disclosed. The method includes providing a floor for a semiconductor device by utilizing a CMOS process. The method further includes providing a BiCMOS-like process on top of the floor to further fabricate the semiconductor device, wherein the BiCMOS-like process and the CMOS process provides the semiconductor device.

REFERENCES:
patent: 4512816 (1985-04-01), Ramde et al.
patent: 4979008 (1990-12-01), Siligoni et al.
patent: 5648281 (1997-07-01), Williams et al.
patent: 6815800 (2004-11-01), Mallikarjunaswamy
patent: 2005/0029582 (2005-02-01), Mallikarjunaswamy

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