Semiconductor device manufacturing: process – Forming bipolar transistor by formation or alteration of... – Forming lateral transistor structure
Reexamination Certificate
2007-05-25
2009-08-11
Fourson, George (Department: 2823)
Semiconductor device manufacturing: process
Forming bipolar transistor by formation or alteration of...
Forming lateral transistor structure
C438S357000, C257SE21373
Reexamination Certificate
active
07572707
ABSTRACT:
A method of forming a semiconductor device is disclosed. The method includes providing a floor for a semiconductor device by utilizing a CMOS process. The method further includes providing a BiCMOS-like process on top of the floor to further fabricate the semiconductor device, wherein the BiCMOS-like process and the CMOS process provides the semiconductor device.
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patent: 6815800 (2004-11-01), Mallikarjunaswamy
patent: 2005/0029582 (2005-02-01), Mallikarjunaswamy
Fourson George
Micrel Inc.
Sawyer Law Group P.C.
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