Method of manufacturing non-volatile semiconductor memory...

Details Method of manufacturing non-volatile semiconductor memory... Method of manufacturing non-volatile semiconductor memory...

2005-12-20

2005-12-20

Lebentritt, Michael (Department: 2812)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

C438S689000

Reexamination Certificate

active

06977209

ABSTRACT:
A 2-bit cell is made up of first and second diffusion regions provided on a substrate surface, first and second storage nodes adjacent to the first and second diffusion region, first and second gate electrodes provided on first and second storage nodes, a third storage node provided on the substrate and a third gate electrode provided on the third storage node. The first and second gate electrodes are connected common to form word line electrodes. A control gate electrode at right angles to the word line electrodes and a third diffusion region in the substrate surface disposed at a longitudinal end of the control gate electrode are provided. A storage node, Node1, of interest, with the control gate channel as a drain, is read without the intermediary of the second node, which is not of interest, such that reading of Node1unaffected by the second node.

REFERENCES:
patent: 6011725 (2000-01-01), Eitan
patent: 6256231 (2001-07-01), Lavi et al.
patent: 6388293 (2002-05-01), Ogura et al.
patent: 6399441 (2002-06-01), Ogura et al.
patent: 2001-156189 (2001-06-01), None
patent: 2001-230332 (2001-08-01), None
patent: 2001-512290 (2001-08-01), None
patent: 2001-357681 (2001-12-01), None
patent: 2002-26149 (2002-01-01), None
“A Novel 2-bit/cell MONOS Memory Device with a Wrapped-Control-Gate Structure that Applies Source-Side Hot Electron Injection” by Hideto Tomiye et al., 2002 Symposium on VLSI Technology Digest of a Technical papers, pp 206-207.

Affiliated with

Also associated with

Rating

Method of manufacturing non-volatile semiconductor memory... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of manufacturing non-volatile semiconductor memory..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing non-volatile semiconductor memory... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3493448