Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Substrate dicing
Reexamination Certificate
2006-05-15
2010-11-30
Brewster, William M. (Department: 2823)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Substrate dicing
C438S036000, C438S462000
Reexamination Certificate
active
07842529
ABSTRACT:
In a method for manufacturing a III-V nitride compound semiconductor light emitting element, light emitting element regions (21) are formed in a low dislocation region on the III-V nitride compound semiconductor substrate wherein high density dislocation sections (22) and low dislocation regions are alternately arranged repeatedly, so that stripe-shaped light emitting regions are in parallel to the direction wherein the high density dislocation sections (22) extend, and then the substrate is broken, after making two scribe lines (23) to have the high density dislocation section (22) in between, on a plane (25) on the opposite side to a plane (24) whereupon the element regions (21) are formed. Thus, chips are separated and the high density dislocation sections (22) can be removed. The pitch of the two scribe lines is preferably 100 μm or more. Thus, the method for manufacturing the III-V nitride compound semiconductor light emitting element by which the high density dislocation section can be surely removed without generating chipping or the like in the outer shape and junction down mounting/flip chip mounting can be performed is provided.
REFERENCES:
patent: 09167858 (1997-06-01), None
patent: 2001-102307 (2001-04-01), None
patent: 2001-210598 (2001-08-01), None
patent: 2003-124572 (2003-04-01), None
patent: 2004-128520 (2004-04-01), None
patent: 2004-260152 (2004-09-01), None
patent: 2004-260152 (2004-09-01), None
International Search Report of PCT/JP2006/309680, date of mailing Aug. 1, 2006.
Brewster William M.
Sanyo Electric Co,. Ltd.
Tottori Sanyo Electric Co. Ltd.
Westerman Hattori Daniels & Adrian LLP
LandOfFree
Method of manufacturing nitride semiconductor light emitting... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of manufacturing nitride semiconductor light emitting..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing nitride semiconductor light emitting... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4239106