Method of manufacturing nitride semiconductor light-emitting...

Details Method of manufacturing nitride semiconductor light-emitting... Method of manufacturing nitride semiconductor light-emitting...

2008-03-05

2010-10-05

Brewster, William M. (Department: 2823)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Compound semiconductor

C438S681000

Reexamination Certificate

active

07807491

ABSTRACT:
Provided is a method of manufacturing a nitride semiconductor light-emitting device including the step of contacting a surfactant material with the surface of an n-type nitride semiconductor layer or the surface of a p-type nitride semiconductor layer before the growth of an active layer, or, with a grown crystal surface during or after the growth of the active layer. According to this manufacturing method, a nitride semiconductor light-emitting device having higher light-emitting efficiency can be obtained.

REFERENCES:
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patent: 2006/0175600 (2006-08-01), Sato et al.
patent: 06-268257 (1994-09-01), None
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patent: 11-126945 (1999-05-01), None
patent: 2000-261106 (2000-09-01), None
J.P. Liu, et al. “Effects of TMln flow on the interface and optical properties of InGaN/GaN mutiple quantum wells” Journal of Crystal Growth 264 (2004) pp. 53-57.

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