Method of manufacturing nitride semiconductor device

Details Method of manufacturing nitride semiconductor device Method of manufacturing nitride semiconductor device

2008-05-27

2008-05-27

Norton, Nadine G. (Department: 1792)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S106000, C257SE21172, C257SE21222

Reexamination Certificate

active

07378351

ABSTRACT:
A nitride semiconductor device is manufactured by the step of forming a nitride semiconductor layer form on a GaN substrate main surface, the step of polishing a back surface of the GaN substrate formed with the above-mentioned nitride semiconductor layer, the step of dry etching the back surface of the GaN substrate subjected to the above-mentioned polishing by using a gas mixture of chlorine and oxygen, and the step of forming an n-type electrode on the back surface of the GaN substrate subjected to the above-mentioned dry etching.

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Hui-Ching Hsin et al. (Journal of Material Science: Materials in Electronics 13 (2002) 203-206).

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