Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal
Reexamination Certificate
2007-08-13
2009-08-18
Lebentritt, Michael S (Department: 2829)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
C438S024000, C438S025000, C438S027000, C438S037000, C438S046000, C257SE21478, C257SE29143, C257SE33004, C257SE33008, C257SE33073
Reexamination Certificate
active
07575944
ABSTRACT:
Provided is a method of manufacturing a nitride-based semiconductor LED including sequentially forming an n-type nitride semiconductor layer, an active layer, and a p-type nitride semiconductor layer on a substrate; forming a Pd/Zn alloy layer on the p-type nitride semiconductor layer; heat-treating the p-type nitride semiconductor layer on which the Pd/Zn alloy layer is formed; removing the Pd/Zn alloy layer formed on the p-type nitride semiconductor layer; mesa-etching portions of the p-type nitride semiconductor layer, the active layer, and the n-type nitride semiconductor layer such that a portion of the upper surface of the n-type nitride semiconductor layer is exposed; and forming an n-electrode and a p-electrode on the exposed n-type nitride semiconductor layer and the p-type nitride semiconductor layer, respectively.
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Korean Notice of Allowance issued in Patent Application No. 10-2007-049633 dated on Jul. 28, 2008.
Han Jae Ho
Kim Ja Yeon
Kim Sun Woon
Kwon Min Ki
Lee Dong Ju
Lebentritt Michael S
McDermott Will & Emery LLP
Samsung Electro-Mechanics Co. Ltd.
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