Method of manufacturing nitride-based semiconductor...

Details Method of manufacturing nitride-based semiconductor... Method of manufacturing nitride-based semiconductor...

2011-08-02

2011-08-02

Ghyka, Alexander G (Department: 2812)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Compound semiconductor

C438S047000, C438S038000, C257SE21097, C257SE21351

Reexamination Certificate

active

07989244

ABSTRACT:
Provided is a method of manufacturing a nitride-based semiconductor light-emitting device having increased efficiency and increased output properties. The method may include forming a sacrificial layer having a wet etching property on a substrate, forming a protective layer on the sacrificial layer, protecting the sacrificial layer in a reaction gas atmosphere for crystal growth, and facilitating epitaxial growth of a semiconductor layer to be formed on the protective layer, forming a semiconductor device including an n-type semiconductor layer, an active layer, and a p-type semiconductor layer on the protective layer, and removing the substrate from the semiconductor device by wet etching the sacrificial layer.

REFERENCES:
patent: 6890779 (2005-05-01), Toda et al.
patent: 2004/0012032 (2004-01-01), Toda et al.
patent: 2005/0029539 (2005-02-01), Toda et al.
patent: 2006/0255341 (2006-11-01), Pinnington et al.

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