Method of manufacturing nano-gap electrode

Details Method of manufacturing nano-gap electrode Method of manufacturing nano-gap electrode

2006-06-06

2006-06-06

Ahmed, Shamim (Department: 1765)

Etching a substrate: processes

Gas phase and nongaseous phase etching on the same substrate

C216S041000, C216S051000, C216S066000, C216S094000, C430S296000, C430S313000, C204S192100, C250S492300, C977S722000

Reexamination Certificate

active

07056446

ABSTRACT:
A method of easily manufacturing a nano-gap electrode by using a focused ion beam lithography includes a layer depositing step of depositing an electrode layer and a metal mask layer in this order on an insulating substrate, a mask pattern forming step of etching the metal mask layer by using the focused ion beam and thereby forming a mask pattern, a dry etching step of transferring a pattern to the electrode layer by dry etching, and a wet etching step of removing the metal mask layer by using a solution that selectively dissolves the metal mask layer compared to the electrode layer.

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