Method of manufacturing mono-layer capacitors

Coating processes – Electrical product produced – Condenser or capacitor

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

4271262, 4271263, 427226, 427240, 427435, 4274432, 427399, 427404, 4274192, 4274193, 437235, B05D 512

Patent

active

051607620

ABSTRACT:
A method of manufacturing monolayer capacitors having a ferroelectric layer on the basis of titanium as a dielectric on a substrate, the ferroelectric layer being located between a first and a second noble metal electrode, in which the ferroelectric layer is formed as a barium titanate layer having a layer thickness in the range of from 0.2 to 0.6 .mu.m in that a stable solution of salts of carbonic acids, alkoxides and/or acetyl acetonates is applied and is thermally decomposed at temperatures in the range of from 500.degree. to 700.degree. C., the solution constituting the ferroelectric layer being adjusted so that after the thermal decomposition process an excess quantity of titanium oxide of about 1 mol. % is obtained, and this coating process being repeated until the desired layer thickness is attained, after which the second noble metal electrode is provided on the ferroelectric layer.

REFERENCES:
patent: 4485094 (1984-11-01), Pebler et al.
patent: 4584280 (1986-04-01), Nango et al.
patent: 4704299 (1987-11-01), Wielonski et al.
patent: 4963390 (1990-10-01), Lipeles
patent: 5006363 (1991-04-01), Fujii et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method of manufacturing mono-layer capacitors does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of manufacturing mono-layer capacitors, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing mono-layer capacitors will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-2050981

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.