Method of manufacturing MIS capacitors for semiconductor IC devi

Details Method of manufacturing MIS capacitors for semiconductor IC devi Method of manufacturing MIS capacitors for semiconductor IC devi

1985-01-15

1986-07-29

Bueker, Richard

Coating processes

Electrical product produced

Condenser or capacitor

427 93, 427 94, 427 95, 427377, H01L 21285

Patent

active

046030590

ABSTRACT:
A method of manufacturing MIS capacitors for semiconductor IC devices, which have a three-ply dielectric layer formed of a first oxide film, a nitride film, and a second oxide film, thereby having high dielectric constants, stable electric characteristics, and high dielectric strength. First, the first oxide film is formed on a semiconductor substrate, on which film is then formed the nitride film, followed by thermal treatment of the nitride film in an oxiding atmosphere to form the thin second oxide film on the nitride film, to obtain the three-ply dielectric layer. The dielectric layer is further thermally treated in an inert gas atmosphere to eliminate a boundary level, etc. developed between the nitride film and the second oxide film at the time of formation of the second oxide film, for electrical stability of the dielectric layer.

REFERENCES:
patent: 4200474 (1980-04-01), Morris
patent: 4250206 (1981-02-01), Bate et al.
patent: 4438157 (1984-03-01), Romano-Moran

Affiliated with

Also associated with

Rating

Method of manufacturing MIS capacitors for semiconductor IC devi does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of manufacturing MIS capacitors for semiconductor IC devi, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing MIS capacitors for semiconductor IC devi will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-699524