Stock material or miscellaneous articles – Structurally defined web or sheet – Including variation in thickness
Patent
1997-11-20
1999-11-16
Loney, Donald
Stock material or miscellaneous articles
Structurally defined web or sheet
Including variation in thickness
428178, 437901, 437974, 156281, 1563063, B32B 300, B32B 3100
Patent
active
059854120
ABSTRACT:
A method of manufacturing microstructures in which a hollow cavity is formed in a first wafer, in particular, a silicon wafer, and the hollow cavity is, covered over by a second wafer, which is in particular, also a silicon wafer, by a wafer bonding process in vacuum for the formation of an enclosed hollow cavity, wherein the wafer bonding is carried out in an ultra-high vacuum in order to achieve the smallest possible internal pressure in the hollow cavity of less than 0.1 mbar. The surfaces of the wafers which are to be brought into contact with one another are treated by a surface cleaning process in order to produce at least substantially pure surfaces, i.e. surfaces which consist substantially only of the material of the respective wafer and which are at least substantially free of H.sub.2 O, H.sub.2 and O.sub.2. A microstructure is also claimed.
REFERENCES:
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Gosele, U., et al.: "Self-propagating room-temperature silicon wafer bond in ultrahigh vacuum", Appl. Phys. Lett. 67(24), Dec. 11, 1995, pp. 3614-3616.
Takagi, H., et al.: "Surface activated bonding of silicone wafers at room temperature", Appl. Phys. Lett. 68(16), Apr. 15, 1996, pp. 2222-2224.
Mack, S., et al.: "Gas Development at the interface of directly bonded silicon wafers: investigation on silicon-based pressure sensors", Sensors and Actuators A 56 (1996) 273-277.
Mack, S., et al., "Analysis of the bonding related gas enclosure in micromachined cavities sealed by silicon wafer bonding", submitted to J. Electrochem. Soc.
Swartz, C.S., et al.: "Silicon pressure transducer technology for automotive applications", (Motorola Semiconductor Group, Arizona, USA).
Gosele, U., et al.: "History and Future of Semiconductor Wafer Bonding", Solid State Phenomena 47 and 48 (1995) pp. 34-44.
Loney Donald
Max-Planck-Gesellschaft zur Foerderung der Wissenschaften e.V.
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