Method of manufacturing metal-semiconductor contacts exhibiting

Details Method of manufacturing metal-semiconductor contacts exhibiting Method of manufacturing metal-semiconductor contacts exhibiting

1979-10-10

1981-12-22

Smith, John D.

Coating processes

Electrical product produced

Condenser or capacitor

156643, 156662, 219121LM, 2504923, 427 88, 427 93, 430314, H01L 21283

Patent

active

043071317

ABSTRACT:
A method for virtually eliminating contact resistances in particular at very high frequency, for instance in the case of source and drain contacts of a field effect transistor. The method consists in creating a matrix of depressions or "dishes", for example 1 to 6 microns in diameter, separated by intervals of some few microns. In a first step, windows are opened in an insulating layer by an etching operation. In a second step, by ion machining, angular profiles are carved in the bottom of the dishes for promoting tunnel effect. In a last step a metal layer is deposited and enshrouds the matrix.

REFERENCES:
patent: 3364087 (1968-01-01), Solomon et al.
patent: 3636417 (1972-01-01), Kimura
patent: 3698941 (1972-10-01), De Nobel et al.
patent: 4056642 (1977-11-01), Saxena et al.
patent: 4098917 (1978-07-01), Bullock et al.
patent: 4107835 (1978-08-01), Bindell et al.

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