Method of manufacturing masked semiconductor laser

Details Method of manufacturing masked semiconductor laser Method of manufacturing masked semiconductor laser

1987-10-13

1989-06-20

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

148DIG71, 148DIG93, 148DIG95, 148DIG106, 156644, 357 17, 372 49, 372103, 437133, 437905, 437935, 437936, 437962, H01S 319

Patent

active

048409227

ABSTRACT:
A masking layer is formed on the light-emitting mirror surface of a semiconductor laser body. The masking layer is capable of blocking or cutting off light emitted from the semiconductor laser body and of being made optically transparent by exposure to the light emitted from the semiconductor laser body dependent on the amount of energy of the emitted light. When the light is emitted from the semiconductor laser body on which the masking layer is deposited, a small light-emitting hole is defined in the masking layer, the light-emitting hole having a desired diameter commensurate with the amount of energy of the emitted light which is applied to the masking layer.

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patent: 4653059 (1987-03-01), Akiba
patent: 4656638 (1987-04-01), Tihanyi et al.
Ettenberg, "A New Dielectric Facet Reflector for Semiconductor Lasers," Appl. Phys. Lett., vol. 32, No. 11, 1 Jun. 1978, pp. 724-725.

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