Method of manufacturing mask type read only memory

Metal working – Method of mechanical manufacture – Assembling or joining

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

29571, 29578, 148 15, 148187, 357 23, 357 91, H01L 21265, H01L 2122

Patent

active

044675208

ABSTRACT:
A method of manufacturing a mask type read only memory having an interconnection wiring and a plurality of MOS transistors, wherein selected source and drain regions are shortened in accordance with a user program after the interconnection wiring layer is formed on the semiconductor substrate. After that, a protective film is formed over the entire surface of the read only memory.

REFERENCES:
patent: 4108686 (1978-08-01), Jacobus, Jr.
patent: 4336647 (1982-06-01), McElroy
patent: 4356042 (1982-10-01), Gedaly et al.
patent: 4364165 (1982-12-01), Dickman et al.
patent: 4364167 (1982-12-01), Donley
patent: 4365405 (1982-12-01), Dickman et al.
patent: 4380866 (1983-04-01), Countryman, Jr. et al.
patent: 4384399 (1983-05-01), Kuo
patent: 4406049 (1983-09-01), Tam et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method of manufacturing mask type read only memory does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of manufacturing mask type read only memory, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing mask type read only memory will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-870664

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.