Semiconductor device manufacturing: process – Having magnetic or ferroelectric component
Reexamination Certificate
1996-09-19
2001-01-30
Bowers, Charles (Department: 2813)
Semiconductor device manufacturing: process
Having magnetic or ferroelectric component
Reexamination Certificate
active
06180419
ABSTRACT:
BACKGROUND OF THE INVENTION
The present invention relates to a method for manufacturing a semiconductor device, and more especially to a method for manufacturing a magnetic field transducer.
FIELD OF THE INVENTION
A Hall Effect device is frequently employed as a transducer in a circuit for sensing a magnetic field. However, the circuit layout is desired in an integrated circuit form at the present time, so the ability to incorporate the transducer as part of the integrated circuit is therefore considered in the present invention.
Although silicon is frequently used to manufacture the semiconductor device, the carrier mobility of silicon is relatively lower than that of the III V group such as GaAs and InP so that its sensitivity is reduced. It is quite bothersome to ask for a relatively higher gain upon designing the process of the integrated circuit layout, since a demand for higher gain leads to unavoidable trouble in achieving the after-stage amplifying circuit layout. Therefore, if the sensitivity of the transducer can be improved, it is very helpful to integrate the transducer with the integrated circuit.
SUMMARY OF THE INVENTION
The object of the present invention is to manufacture a Hall magnetic field transducing device having a high sensitivity, and capable of being integrated well within an integrated circuit by utilizing a silicon material which is frequently employed for fabricating the integrated circuit.
According to the present invention, a method for manufacturing a magnetic field transducing device includes (a) providing a substrate, (b) subjecting the substrate to a semiconductor device fabricating process in order to obtain a magnetic field transducer, (c) forming an oxide over the magnetic field transducer and (d) covering a magnetic film on the oxide in order to obtain the magnetic field transducing device.
In accordance with an aspect of the present invention, the substrate is an n-type silicon substrate.
In accordance with another aspect of the present invention, the semiconductor device fabricating process includes following steps (b1) utilizing a first mask photolithography etching process to form an annular groove on the substrate, (b2) covering a first insulation layer on the substrate and using a second mask photolithography etching process to form a plurality of diffusing openings on the first insulation layer, (b3) forming a an extrinsic semiconductor on the substrate exposed by the plurality of diffusing openings, (b4) forming a second insulation layer on the substrate, (b5) utilizing a third mask photolithography etching process to form a plurality of contacts on the extrinsic semiconductor and (b6) forming a conductor on the substrate in order to form a contacting line.
In accordance with another aspect of the present invention, the first mask photolithography etching process further includes following steps (b11) forming a first photoresist on the substrate and utilizing the first photolithography process to form an exposed annular portion on the substrate and (b12) etching the exposed substrate by a first etching solution in order to define the annular groove.
In accordance with another aspect of the present invention, the first etching solution includes HNO
3
, HF(Aq) and CH
3
COOH with a ratio of 26:1:33.
In accordance with another aspect of the present invention, a depth, a width and a circumference of the annular groove are respectively about 2 &mgr;m, 100 &mgr;m and 400 &mgr;m.
In accordance with another aspect of the present invention, the second mask photolithography etching process further includes following steps (b21) forming a second photoresist on the substrate and using the second photolithography process to form a first plurality of exposed regions on the substrate and (b22) etching the first plurality of exposed regions by a second etching solution to form the plurality of diffusing openings.
In accordance with another aspect of the present invention, the second etching solution includes HNO
3
, HF(Aq) and CH
3
COOH with a ratio of 26:1:33.
In accordance with another aspect of the present invention, the step (b3) further includes following steps (b31) heating the substrate by a heater at about 900° C., and predepositing the substrate by POCl
3
at about 25° C. for about 10 minutes and (b32) processing a drive-in process at about 900° C. for about 20 minute in order to diffuse an n+ region in the substrate.
In accordance with another aspect of the present invention, the third mask photolithography etching process further includes following steps (b41) forming a third photoresist on the substrate and using the third photolithography process to form a second plurality of exposed regions on the substrate and (b42) etching the second plurality of exposed regions by a third etching solution to form the plurality of contacts.
In accordance with another aspect of the present invention, the third etching solution includes HNO
3
, HF(Aq) and CH
3
COOH with a ratio of 26:1:33.
In accordance with another aspect of the present invention, the connecting line is formed by plating an aluminum (Al) having a thickness of about 500 nm over the substrate and processing the aluminum by a fourth mask photolithography etching process which further includes a step of patterning the plated aluminum patterned into the connecting line.
In accordance with another aspect of the present invention, the oxide is formed by depositing a SiO
2
layer with a thickness of about 500 nm on a back of the substrate.
In accordance with another aspect of the present invention, the magnetic film is defined by plating an Ni layer with a thickness of about 100 nm and a Co layer having a thickness of about 100 nm on the oxide.
In accordance with another aspect of the present invention, the magnetic field transduing device having a low cross sensitivity and a symmetric sensitivity.
In accordance with another aspect of the present invention, the magnetic field transducing device can be integrable formed in an integrated circuit.
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patent: 4607271 (1986-08-01), Popovic et al.
patent: 4667391 (1987-05-01), Chapuy et al.
patent: 4772929 (1988-09-01), Manchester
patent: 5070317 (1991-12-01), Bhagat
patent: 5198795 (1993-03-01), Shibasaki et al.
patent: 5652445 (1997-07-01), Johnson
patent: 62-086880 (1987-04-01), None
Chang Chun Y.
Jeng Jz-Jan
Lei Tan-Fu
Lin Hsiao-Yi
Pan Ci-Lin
Bowers Charles
Knobbe Martens Olson & Bear LLP
National Science Council
Pert Evan
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