Method of manufacturing logic semiconductor device having non-vo

Fishing – trapping – and vermin destroying

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

437 48, 437 45, 437 52, H01L 21265, H01L 2170

Patent

active

051589028

ABSTRACT:
The present invention discloses a logic semiconductor device having a non-volatile memory in which a memory cell portion and a logic circuit portion are formed on a single semiconductor substrate, and a floating gate of the memory cell portion and a gate of the logic circuit portion are made of different materials, and a method of manufacturing the same.

REFERENCES:
patent: 4426764 (1984-01-01), Kosa et al.
patent: 4471373 (1984-09-01), Shimizu et al.
patent: 4598460 (1986-07-01), Owens et al.
patent: 4635347 (1987-01-01), Lien et al.
patent: 4651406 (1987-03-01), Shimizu et al.
patent: 4663645 (1987-05-01), Komori et al.
patent: 4720323 (1988-01-01), Sato
patent: 4745083 (1988-05-01), Huie
patent: 4768080 (1988-08-01), Sato
patent: 4830974 (1989-05-01), Chang et al.
patent: 4835740 (1989-05-01), Sato
patent: 4851361 (1989-07-01), Schumann et al.
patent: 4859619 (1989-08-01), Wu et al.
patent: 4872041 (1989-10-01), Sugiura
patent: 4890148 (1989-12-01), Ikeda et al.
patent: 4895544 (1989-07-01), Shimizu

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method of manufacturing logic semiconductor device having non-vo does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of manufacturing logic semiconductor device having non-vo, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing logic semiconductor device having non-vo will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-905321

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.