Method of manufacturing liquid ejection head

Etching a substrate: processes – Forming or treating thermal ink jet article

Reexamination Certificate

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Reexamination Certificate

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07871531

ABSTRACT:
A method of manufacturing a liquid ejection head in which a pressure chamber for storing an ejection liquid is connected with an ink supply channel through a restrictor, includes the steps of: forming first spaces for the liquid supply channel and the pressure chamber in a silicon substrate by performing anisotropic etching on a surface of the silicon substrate, the surface of the silicon substrate being parallel to a Si(110) plane, each of the first spaces being defined by two vertical walls and two inclined walls, each of the two vertical walls being parallel to a Si(111) plane that is perpendicular to the surface of the silicon substrate, each of the two inclined walls being parallel to a Si(111) plane that is inclined with respect to the surface of the silicon substrate; then forming an etching protection film on the silicon substrate, the etching protection film protecting the silicon substrate from being etched; then forming an opening corresponding to a second space for the restrictor in the etching protection film; and then performing anisotropic etching on the surface of the silicon substrate through the opening of the etching protection film to form the second space in the silicon substrate, the second space for the restrictor being defined by two inclined walls each of which is parallel to the Si(111) plane that is inclined with respect to the surface of the silicon substrate, the second space connecting the first spaces for the liquid supply channel and the pressure chamber with each other.

REFERENCES:
patent: 5723053 (1998-03-01), Momose et al.
patent: 5956058 (1999-09-01), Momose et al.
patent: 6594898 (2003-07-01), Yun
patent: 2006/0044347 (2006-03-01), Kwon et al.
patent: 7-132595 (1995-05-01), None
JP 07-132595 Machine Translation.
JP 07-132595 Machine Translation of Miura et al (JP 07-132595) May 23, 1995.

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