Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Including integrally formed optical element
Reexamination Certificate
1999-06-29
2001-03-20
Nelms, David (Department: 2818)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Including integrally formed optical element
C438S030000
Reexamination Certificate
active
06204082
ABSTRACT:
BACKGROUND OF THE INVENTION
1. Field of the Invention
The present invention relates to a method of manufacturing a liquid crystal display device, and more particularly to a method of manufacturing a liquid crystal display device having a high aperture ratio.
2. Description of the Related Art
In general, an active matrix type-liquid crystal display(AM-LCD) devices is thin, so that it is often used in various display devices. In this AM-LCD device, one TFT is provided as a switching element for each pixel, so that individual pixel electrodes are independently driven. The contrast is therefore not reduced based upon the reduction of a duty ratio, and also the angle of visibility is not reduced, even when the capacity of display is increased to increase the number of lines.
To improve aperture ratio of LCD panel, a method overlapping a pixel electrode with portions of a gate line and a data line, is proposed.
FIG. 1
shows a cross section view of a conventional AM-LCD having a high aperture ratio.
Referring to
FIG. 1
, a gate
12
is formed on a transparent insulating substrate such as a glass. A gate insulating layer
13
is then formed on the substrate in which the gate
12
is formed. A channel layer
14
is formed on the gate insulating layer
13
over the gate
12
and an etch stopper
15
is formed thereon. Ohmic layers
16
a
and
16
b
are formed on the channel layer
14
so that they overlap with both side of the etch stopper
15
and expose its upper portion. On the ohmic layers
16
a
and
16
b
are formed drain and source
17
a
and
17
b.
A resin layer
18
as a layer for intermediate insulation and planarization, is coated on the overall substrate and then etched to expose the portion of the source
16
b,
thereby forming a contact hole H
1
. An ITO layer is deposited on the contact hole H
1
and the resin layer
18
and then patterned, to form a pixel electrode
19
. At this time, the pixel electrode
19
is formed to overlapped with portions of a gate line and a data line, as not shown in FIG.
1
.
However, the resin layer
18
used for planarization, is a high price, to raise production cost.
Furthermore, when forming the pixel electrode
19
, interface properties between the resin layer
18
and the ITO layer are bad, so that defects occur.
Moreover, addition coater is required for forming the resin layer
18
.
SUMMARY OF THE INVENTION
It is therefore an object of the present invention to a method of manufacturing a liquid crystal display device which can easily planarize the surface of a substrate and obtain a high aperture ratio, without employing a resin layer.
To accomplish this above object, according to the present invention, firstly a first metal layer is formed a transparent insulating substrate. The portion of the first metal layer is then anodized, to define a gate and to form a first oxide layer on the substrate at both sides of the gate. Next, a gate insulating layer is formed on the overall substrate and a channel layer is formed on the gate insulating layer over the gate. Ohmic layers are then formed on the gate insulating layer to be overlapped with both side of the channel layer and a second metal layer is formed on the overall substrate. Thereafter, the portion of the second metal layer is anodized, to define source and drain on the ohmic layers and to form a second oxide layer. An insulating layer is then formed on the overall substrate and etched to expose the portion of the source, thereby forming a contact hole. Thereafter, a pixel electrode is formed on the insulating layer to be in contact with the source through the contact hole.
In this embodiment, the first metal layer is formed of an aluminum and the insulating layer formed of a SiNx layer.
Furthermore, the channel layer is formed using a photoresist layer pattern formed by back-exposure using the gate as an exposure mask.
Additional object, advantages and novel features of the invention will be set forth in part in the description which follows, and in part will become apparent to those skilled in the art upon examination of the following or may be learned by practice of the invention. The objects and advantages of the invention may be realized and attained by means of the instrumentalities and combinations particularly pointed out in the appended claims.
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Hyundai Electronics Industries Co,. Ltd.
Nelms David
Nhu David
Selitto & Associates, P.C.
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