Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Including integrally formed optical element
Reexamination Certificate
2007-01-02
2007-01-02
Booth, Richard A. (Department: 2812)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Including integrally formed optical element
C257SE21415
Reexamination Certificate
active
10842553
ABSTRACT:
A conductive layer, a metal layer and a doped layer are sequentially formed on a glass substrate. A CMOS circuit region, a transistor region, a reflective region, a transmission region and a capacitor region are defined. Next, a polysilicon layer and an insulating layer are formed to serve as a source/drain region, a channel region and a gate insulating layer. Then, a resin layer with a rough surface is formed. Next, a metal layer is formed to serve as a gate structure and a reflective electrode. Then, an ion implanting process is performed to form the source/drain structure of a PMOS. Then, a passivation layer is formed to define a transmission region. Finally, the metal layer and the doped layer are removed to expose the conductive layer.
REFERENCES:
patent: 11-218788 (1999-08-01), None
patent: 2001-060693 (2001-03-01), None
patent: 1234030 (2005-06-01), None
Booth Richard A.
TPO Displays Corporation
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