Method of manufacturing light sensitive heterodiode

Details Method of manufacturing light sensitive heterodiode Method of manufacturing light sensitive heterodiode

1974-03-11

1976-03-02

Vertiz, Oscar R.

Chemistry: electrical and wave energy

Processes and products

Vacuum arc discharge coating

29572, 148 15, 357 6, 357 16, 357 30, C23C 1500

Patent

active

039416720

ABSTRACT:
A method of manufacturing a light sensitive heterodiode comprising an n-type transparent conductive layer and a p-type photoconductive layer provided thereon and forming rectifying contact therewith, in which before providing the p-type photoconductive layer on the n-type transparent conductive layer the surface of the latter is smoothed down by mechanical polishing or by bombarding it with ions accelerated by discharge.

REFERENCES:
patent: 3755002 (1973-08-01), Hirai et al.
patent: 3770606 (1970-11-01), Lepselter
patent: 3805128 (1974-04-01), Scholl et al.
Kajiyama et al., "Electrical and Optical Properties of S.sub.4 O.sub.2 --Si Hetero-junctions," Japan J. Appl. Phys. b, (1967), 905-906.

Affiliated with

Also associated with

Rating

Method of manufacturing light sensitive heterodiode does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of manufacturing light sensitive heterodiode, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing light sensitive heterodiode will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1276752