Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Making emissive array
Patent
1998-02-27
1999-10-26
Chaudhari, Chandra
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Making emissive array
438 33, 438 68, 438 73, 438113, 438462, 438975, 257620, H01L 3300
Patent
active
059727292
ABSTRACT:
A method of manufacturing a light-emitting or a light-receiving diode array chip. A first interlayer dielectric is formed in each of a plurality of chip areas on a substrate of a first conductivity type. Impurity diffusion regions of a second conductivity type are formed in the substrate using the first interlayer dielectric as a diffusion mask. An electrode is formed in contact with each of the impurity diffusion regions. The substrate is separated so that the plurality of chip areas are separated into individual chips. A second interlayer dielectric may be formed on the first interlayer dielectric after forming the impurity diffusion regions. The second interlayer dielectric is formed such that the second interlayer dielectric is absent from a second area along which the substrate is separated into the individual chips, at least in the vicinity of the last one of a plurality of windows. Island-shaped patterns may be formed on the interlayer dielectric so as to hold the interlayer dielectric onto the substrate. The first interlayer dielectric may be removed such that the first interlayer dielectric is absent from the second area, at least in the vicinity of the last one of the plurality of windows.
REFERENCES:
patent: 5053836 (1991-10-01), McClurg
patent: 5430325 (1995-07-01), Sawada et al.
patent: 5523590 (1996-06-01), Ogihara et al.
Hamano Hiroshi
Ogihara Mitsuhiko
Shimizu Takatoku
Taninaka Masumi
Chaudhari Chandra
Christianson Keith
Frank Robert J.
OKI Electric Industry Co., Ltd.
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