Method of manufacturing light converter with amorphous-silicon p

Details Method of manufacturing light converter with amorphous-silicon p Method of manufacturing light converter with amorphous-silicon p

1995-05-26

1997-02-18

Breneman, R. Bruce

Fishing, trapping, and vermin destroying

437127, 437906, H01L 21208

Patent

active

056041365

ABSTRACT:
A method of manufacturing a light converter with an LED and an amorphous-silicon pin heterojunction diode includes steps of a) preparing an LED structure on one side of a substrate as a light-emitting unit; b) forming a buffer layer on the other side of the substrate; and c) depositing a pin (positive type/intrinsic type
egative type) diode on the buffer layer as a light-absorbing unit this blue/red light converter, and the value of rise time obtained under 1 kf.OMEGA. is 112.5 .mu.sec. The present invention desirably lower the cost, simplify the preparation process, and avoids degrading features of a light converting unit by over-heating during the process of preparing the pin diode.

REFERENCES:
patent: 4211586 (1980-07-01), Fang et al.
patent: 5055894 (1991-10-01), Chan
patent: 5068204 (1991-11-01), Kukimoto et al.

Affiliated with

Also associated with

Rating

Method of manufacturing light converter with amorphous-silicon p does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of manufacturing light converter with amorphous-silicon p, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing light converter with amorphous-silicon p will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1602058