Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – In combination with or also constituting light responsive...
Patent
1996-07-31
1998-02-03
Ngo, Ngan V.
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
In combination with or also constituting light responsive...
257 81, 257 85, 257 94, 257103, H01L 2715, H01L 3300, H01L 3112
Patent
active
057147728
ABSTRACT:
A method of manufacturing a light converter with an LED and an amorphous-silicon pin heterojunction diode includes steps of a) preparing an LED structure on one side of a substrate as a light-emitting unit; b) forming a buffer layer on the other side of the substrate; and c) depositing a pin (positive type/intrinsic type
egative type) diode on the buffer layer as a light-absorbing unit this blue/red light converter, and the value of rise time obtained under 1 k.OMEGA. is 112.5 .mu.sec. The present invention desirably lower the cost, simplify the preparation process, and avoids degrading features of a light converting unit by over-heating during the process of preparing the pin diode.
REFERENCES:
patent: 3748480 (1973-07-01), Coleman
patent: 3881113 (1975-04-01), Rideout et al.
patent: 4766471 (1988-08-01), Ovshingky et al.
patent: 5101246 (1992-03-01), Onodera
patent: 5414282 (1995-05-01), Ogura
Fang Yean-Kuen
Kuo Lee-Ching
Lee Kuen-Hsien
Yang Yaw-Jou
National Science Council
Ngo Ngan V.
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