Method of manufacturing ITO sputtering target

Plastic and nonmetallic article shaping or treating: processes – Including step of generating heat by friction

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

501126, 501134, F27D 700, C04B 3550

Patent

active

050947877

ABSTRACT:
In manufacturing a high-density ITO sputtering target by press-molding a powder mixture consisting essentially of indium oxide and tin oxide is compacted and the resulting compact is sintered. The sintering is performed in an atmosphere of oxygen under a pressure of at least one atmosphere (gauge pressure). The present invention offers very advantageous effects from the industrial viewpoint in that it permits mass production of high-performance, high-density ITO targets at low cost using mass productivity.

REFERENCES:
patent: 4962071 (1990-10-01), Bayard
Fraser et al., J. Electrochem. Soc.: "Solid State Science and Technology", 119 (10), 1368-1374 (1972).

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method of manufacturing ITO sputtering target does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of manufacturing ITO sputtering target, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing ITO sputtering target will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-2283128

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.