Method of manufacturing iron garnet layers

Details Method of manufacturing iron garnet layers Method of manufacturing iron garnet layers

1989-07-25

1990-08-07

Nguyen, Nam X.

Chemistry: electrical and wave energy

Apparatus

Coating, forming or etching by sputtering

20419215, 2041922, 20419226, G02B 514, C23C 1434

Patent

active

049462415

ABSTRACT:
A method of manufacturing iron garnet layers on a substrate, in a layer sequence of different order by means of RF-cathode sputtering in an inert gas plasma, using a target comprising predominantly an iron garnet phase in addition to residual phases having a substantially equal sputtering rate, the ions of said inert gas plasma bombarding the growing layer having an ion energy of less than 10.sup.2 eV and a pressure in the range from 0.1 to 2.0 Pa, in which method RF-power is fed into the target electrode (cathode) at a RF-voltage of approximately 200 V.sub.rms, thereby first depositing an amorphous to X-ray amorphous iron garnet layer as an intermediate layer at a substrate temperature below 460.degree. C. and, subsequently, a polycrystalline iron garnet layer at a substrate temperature exceeding 520.degree. C., while simultaneously applying a RF-voltage of approximately 50 V.sub.rms to the substrate electrode, which voltage is linearly reduced during the deposition of the first 5-10 nm of the layer to a floating potential relative to earth.

REFERENCES:
patent: 4608142 (1986-08-01), Gomi et al.
patent: 4832980 (1989-05-01), Ichihara et al.

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