Method of manufacturing IPS-LCD using 4-mask process

Details Method of manufacturing IPS-LCD using 4-mask process Method of manufacturing IPS-LCD using 4-mask process

2005-12-06

2005-12-06

Ngo, Huyen (Department: 2871)

Liquid crystal cells, elements and systems

Particular structure

Having significant detail of cell structure only

C349S043000, C430S005000, C438S648000, C257S350000, C257S059000

Reexamination Certificate

active

06972819

ABSTRACT:
A method of manufacturing an IPS-LCD using a 4-mask process including forming amorphous silicon islands and contact holes using the same mask. Each amorphous silicon island is used to form the channel of one transistor inside the active area, and each contact hole is used to form a portion of an anti-ESD circuit around the active area. Amorphous silicon islands and the contact holes are also found using a phase-shaft mask. The phase shift mask at least includes a high transmittance area, a low transmittance area, and a transparent area.

REFERENCES:
patent: 5674647 (1997-10-01), Isao et al.
patent: 5882827 (1999-03-01), Nakao
patent: 6335129 (2002-01-01), Asano et al.
patent: 6403980 (2002-06-01), Park
patent: 6509614 (2003-01-01), Shih
patent: 6531392 (2003-03-01), Song et al.

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