Method of manufacturing inverse t-shaped transistor

Details Method of manufacturing inverse t-shaped transistor Method of manufacturing inverse t-shaped transistor

1995-07-25

1997-08-05

Niebling, John

Fishing, trapping, and vermin destroying

438303, H01L 21265

Patent

active

056542186

ABSTRACT:
A method of manufacturing an inverse-T shaped transistor is disclosed including the steps of sequentially forming a first insulating film and a second insulating film on a semiconductor substrate of a first conductivity type, sequentially removing a portion of the second insulating film and a portion of the first insulating film, to thereby form an inverse-T shaped void region therein, filling the inverse-T shaped void region with a conductor to form a gate electrode having a central body portion and wings, removing the remaining first and second insulating films, and implanting impurity ions of a second conductivity type, to thereby form low concentration impurity regions in substrate areas below both wings of the gate electrode and, simultaneously, to form high concentration impurity regions in substrate areas not covered by the gate electrode.

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patent: 4907048 (1990-03-01), Huang
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patent: 5120668 (1992-06-01), Hsu et al.
patent: 5182619 (1993-01-01), Pfiester
patent: 5432104 (1995-07-01), Sato
patent: 5545575 (1996-08-01), Cheng et al.

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