Method of manufacturing interconnect metallization comprising me

Details Method of manufacturing interconnect metallization comprising me Method of manufacturing interconnect metallization comprising me

1992-04-01

1994-05-17

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437192, 437194, 437200, H01L 2144

Patent

active

053127722

ABSTRACT:
In a semiconductor device including a substrate of Si or polycrystalline silicon and an interlayer insulation film region, a region for interconnection with the substrate is composed of a refractory metal silicide layer, a refractory metal nitride layer, an Al or Al alloy layer, and possibly a further refractory metal nitride layer, while a region for interconnection on the interlayer insulation film on the substrate is composed of a refractory metal, or refractory metal oxide layer, a refractory metal nitride layer, an Al or Al alloy layer, and possibly a further refractory metal nitride layer, providing interconnections for integrated circuits. In the manufacture of this interconnection structure, rapid thermal annealing is performed at 600.degree.-1000.degree. C. on the refractory metal nitride layer of the region for interconnection with the substrate, followed by the formation of Al or Al alloy layer.

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