Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Including integrally formed optical element
Reexamination Certificate
2006-03-28
2006-03-28
Booth, Richard A. (Department: 2812)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Including integrally formed optical element
C438S046000
Reexamination Certificate
active
07018861
ABSTRACT:
Integrated semiconductor devices are manufactured by providing a layered semiconductor structure having an exposed surface and providing a mask on the exposed surface thereby defining a masked region in the layered structure underneath said mask. The mask has a main direction of extension with a width across the main direction and an end portion. The layered structure is etched over a given depth starting from the exposed surface, whereby the masked region is left substantially unaffected by the etching process and has an end surface extending underneath the end portion of the mask. A further layered semiconductor structure is grown around the masked region to produce an integrated layered semiconductor structure having at the end surface an interface between the layered structure and the further grown structure. The mask width is selected to be less than 50 microns.
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Codato Simone
Fang Ruiyu
Rigo Cesare
Rosso Marzia
Agilent Technologie,s Inc.
Booth Richard A.
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