Metal treatment – Process of modifying or maintaining internal physical... – Chemical-heat removing or burning of metal
Patent
1977-08-05
1979-04-24
Dean, R.
Metal treatment
Process of modifying or maintaining internal physical...
Chemical-heat removing or burning of metal
29576E, 29576W, 29578, 148187, 148188, 357 35, 357 36, 357 44, 357 46, 357 92, H01L 2122, H01L 2176, H01L 2704
Patent
active
041510194
ABSTRACT:
A P type semiconductor layer is formed on an N type semiconductor layer by vapor epitaxial growth technique, an insulating film is formed on the P type semiconductor layer and a grid shape first opening is provided through the insulating film. Then, phosphorus is diffused into the P type semiconductor layer through the grid shape opening to form a first N type region extending through the semiconductor layer to reach the N type semiconductor layer. Then, second openings are formed through respective sections of the insulating film divided by and surrounded by the grid shape first opening and boron is diffused through the first and second openings to form first and second P type regions in the grid shape first N type region and the P type semiconductor layer, respectively. Finally, third openings are formed through respective portions of the insulating film and phosphorus is diffused into the P type semiconductor layer through the third openings to form second N type regions thereby forming an integrated injection logic semiconductor device including a lateral PNP transistor and a vertical NPN transistor.
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Ito Shintaro
Nakai Masanori
Nakamura Jun-ichi
Nishi Yoshio
Shinozaki Satoshi
Dean R.
Saba W. G.
Tokyo Shibaura Electric Co. Ltd.
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