Method of manufacturing insulating film and electric device util

Details Method of manufacturing insulating film and electric device util Method of manufacturing insulating film and electric device util

1982-10-22

1984-07-17

Ozaki, G.

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

148 15, 148188, 148190, 427 93, H01L 21225, H01L 21265

Patent

active

044604173

ABSTRACT:
An insulating film is prepared by oxidizing an amorphous silicon layer containing boron or boron and germanium. The amorphous silicon layer is partially oxidized inwardly from the surface of the amorphous silicon layer to form the insulating film, while the unoxidized portion of the amorphous silicon layer is used as a conductive layer. The amorphous silicon layer may contain boron or boron and an element of Group IV, for example germanium. The insulating film is utilized to fabricate a bipolar transistor.

REFERENCES:
patent: 3928095 (1975-12-01), Harigaya et al.
patent: 4069067 (1978-01-01), Ichinohe
patent: 4074304 (1978-02-01), Shiba
patent: 4169740 (1979-10-01), Kalbitzer et al.
patent: 4339285 (1982-07-01), Pankove
patent: 4357179 (1982-11-01), Adams et al.

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