Method of manufacturing insulated via hole structure for semicon

Details Method of manufacturing insulated via hole structure for semicon Method of manufacturing insulated via hole structure for semicon

1993-02-12

1994-11-08

Thomas, Tom

Fishing, trapping, and vermin destroying

437 38, 148DIG50, H01L 21441

Patent

active

053626788

ABSTRACT:
A semiconductor device includes a semiconductor substrate, first and second semiconductor layers of opposite conductivity types successively disposed on the semiconductor substrate, and a via hole structure including a hole penetrating through the first and second semiconductor layers and into the substrate, the via holes being defined by a side wall of the first and second layers and of the substrate, an electrically conducting material disposed on the side wall contacting the first and second semiconductor layers, and an electrically isolating region disposed in the first and second layers at the side wall and contacting the electrically conducting material. The electrically isolating region is formed with an ion flux applied either before or after etching of the via hole.

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Sumitani et al., "A High Power Aspect Ratio Via Hole Dry Etching Technique for High Power GaAs MESFET", IEEE GaAs IC Symposium, Oct. 1989, pp. 207-210.
Kobiki et al., "A Ka-Band GaAs Power MMIC", IEEE Monolithic Circuits Symposium, 1985, pp. 31-34.

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