Method of manufacturing insulated gate semiconductor devices by

Details Method of manufacturing insulated gate semiconductor devices by Method of manufacturing insulated gate semiconductor devices by

1979-06-13

1981-06-23

Smith, John D.

Coating processes

Electrical product produced

Condenser or capacitor

148 15, 156DIG64, 156DIG103, 156662, 357 23, 427 93, 427255, 4272554, 427 94, H01L 21316, H01L 2978

Patent

active

042750938

ABSTRACT:
A method of manufacturing SOS type semiconductor devices having small leakage current comprising the steps of forming a single crystal semiconductor film on an insulator single crystal substrate, selectively forming a film for masking against oxidation on the surface of the single crystal semiconductor film, and thermally oxidizing the single crystal semiconductor film, in a region which is not covered with the masking film, down to the surface of the insulating single crystal substrate in a water vapor atmosphere having a high pressure which is at least more than atmospheric pressure.

REFERENCES:
patent: 4126731 (1978-11-01), Nishizawa et al.
Capell et al., "Process refinements bring C-MOS on sapphire into commercial use," Electronics, vol 50, No. 11, May 26, 1977.
Powell et al., "Selective Oxidation of Silicon in Low-Temperature High Pressure Steam," IEEE Transactions on Electron Devices, vol. ED-21, No. 10, Oct. 1974.

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