Method of manufacturing insulated gate field effect transistor h

Details Method of manufacturing insulated gate field effect transistor h Method of manufacturing insulated gate field effect transistor h

1990-04-20

1991-12-17

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 45, 437150, 437931, 148DIG26, H01L 21266

Patent

active

050735128

ABSTRACT:
On a semiconductor substrate, a thin insulating film to be used as a gate insulating film, a thin polysilicon film and a thick mask layer are formed in the order and an opening for gate electrode formation is formed in the mask layer. After an ion implantation of impurities having the same conductivity type as that of the substrate is performed thereto through the opening to form, in the substrate, an impurity region having the same conductivity type as and impurity density larger than that of the substrate, the opening is filled with electrically conductive material. Thereafter, the mask layer is removed and an exposed first polysilicon film is removed to form a gate electrode comprising the conductive material and an underlying portion of the polysilicon film. Then, source region and drain region are formed in self-aligned manner with respect to the gate electrode.

REFERENCES:
patent: 4145233 (1979-03-01), Sefick et al.
patent: 4514893 (1985-05-01), Kinsbron
patent: 4895520 (1990-01-01), Berg
Wolf, S., Silicon Processing for the VLSI Era, pp. 384-387, 1986.

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