Method of manufacturing infrared rays receiver and structure...

Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation

Reexamination Certificate

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Details

C257S680000, C257SE21502, C438S064000, C438S116000, C438S124000

Reexamination Certificate

active

07576403

ABSTRACT:
A method of manufacturing an infrared rays receiver comprises the steps of: chip attach; wire bonding; encapsulation; metal housing covering; encapsulation; pin cutting; and testing. A lead frame has several pins, wherein one pin has a coupling part. An infrared rays receiving chip is coupled to the coupling part of the pin of the lead frame, and electrically connected to the other pins by bonding wires. Thereafter, a light-pervious adhesive encapsulates part of the lead frame, the chip, and the bonding wires. Thereafter, the light-pervious adhesive is covered with a metal housing having a through hole so as to expose the infrared rays receiving chip via the through hole. Thereafter, the metal housing and the light-pervious adhesive are encapsulated into a unity by a colored adhesive. Consequently, the infrared rays receiver is protected from the occurrence of short circuits and has a metal shielding effect to provide a longer transmission distance.

REFERENCES:
patent: 4293768 (1981-10-01), Adachi et al.
patent: 4782382 (1988-11-01), Godfrey
patent: 4880979 (1989-11-01), Yoshida
patent: 5763900 (1998-06-01), Wang
patent: 7009267 (2006-03-01), Honboh
patent: 7157709 (2007-01-01), Taniguchi et al.

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